Influence of hydrogen passivation on the infrared spectra of Hg0.8Cd0.2Te
- 5 August 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (6) , 703-705
- https://doi.org/10.1063/1.106385
Abstract
Hydrogen passivation has been investigated in Hg0.8Cd0 2Te using infrared transmission measurements. The ability of atomic hydrogen to passivate the activities of residual impurities or defects is demonstrated by the fact that the absorption edge is moved to the short wave direction and the absorption below the energy gap is reduced after the incorporation of atomic hydrogen using an rf glow discharge system. It is also found that Hg vacancies can be effectively passivated after hydrogenation. Hydrogen injection and passivation of residual impurities or defects are also observed in Hg0.8Cd0.2Te boiled in water.Keywords
This publication has 10 references indexed in Scilit:
- Hydrogen passivation in Cd1−xZnxTe studied by photoluminescenceApplied Physics Letters, 1991
- Influence of defect absorption on the absorption edge in Hg0.8Cd0.2TeApplied Physics Letters, 1990
- Photoluminescence study of hydrogen passivation in GaAs and AlGaAs by the photochemical vapor deposition systemApplied Physics Letters, 1990
- Shallow donors and D-X centers neutralization by atomic hydrogen in GaAlAs doped with siliconJournal of Applied Physics, 1988
- Hydrogen in crystalline semiconductorsApplied Physics A, 1987
- Si donor neutralization in high-purity GaAsApplied Physics Letters, 1987
- Hydrogen-acceptor interaction in CdTe and ZnTe studied by photoluminescenceSolid State Communications, 1986
- Hydrogen injection and neutralization of boron acceptors in silicon boiled in waterApplied Physics Letters, 1986
- Optical absorption edge in Hg0.7 Cd0.3TeJournal of Vacuum Science & Technology A, 1983
- Annealing of Hg1−xCdxTe: Hg loss rates and annealing of ion implantation damageJournal of Vacuum Science & Technology A, 1983