Decay of excess carrier concentration in thermally treated silicon
- 16 August 1973
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 18 (2) , 749-756
- https://doi.org/10.1002/pssa.2210180238
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- The characteristics of the 0.93 to 1.0 ev luminescence bands in GaAsPhysica Status Solidi (a), 1971
- Decay of excess carriers in semiconductorsPhysica Status Solidi (a), 1970
- Influence of heat treatment of silicon on minority carrier lifetimeCzechoslovak Journal of Physics, 1970
- The Effect of Heat Treatment on the Minority Carrier Lifetime in SiliconJournal of the Physics Society Japan, 1961
- Gold in SiliconJournal of the Electrochemical Society, 1958