Theory of Raman-Mediated Pulsed Amplification in Silicon-Wire Waveguides
- 30 January 2006
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 42 (2) , 160-170
- https://doi.org/10.1109/jqe.2005.861827
Abstract
We present a comprehensive theoretical study of pulsed stimulated Raman scattering in silicon wires. The pulse dynamics is described by a system of coupled equations, which describes intrinsic waveguide optical losses, phase shift and losses due to free-carriers (FCs) generated through two-photon absorption (TPA), first- and second-order frequency dispersion, self-phase and cross-phase modulation, TPA losses, and the interpulse Raman interaction. Furthermore, the influence of the FCs on the pulse dynamics is incorporated through a rate equation. The corresponding system of equations has then been numerically integrated, and phenomena such as noise-seeded Raman amplification, pulsed Raman amplification, and Raman-mediated pulse interaction have been described.Keywords
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