20 dB on-off Raman amplification in silicon waveguides
- 1 January 2005
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 1, 349-351
- https://doi.org/10.1109/cleo.2005.201775
Abstract
We report on-off optical gains of 20 dB in silicon-on-insulator waveguides. Free carrier and two photon absorption of 4 dB is measured indicating an intrinsic Raman gain of 24 dBKeywords
This publication has 10 references indexed in Scilit:
- Efficient Raman amplification in silicon-on-insulator waveguidesApplied Physics Letters, 2004
- Wavelength conversion in silicon using Raman induced four-wave mixingApplied Physics Letters, 2004
- Role of free carriers from two-photon absorption in Raman amplification in silicon-on-insulator waveguidesApplied Physics Letters, 2004
- Demonstration of 11dB fiber-to-fiber gain in a silicon Raman amplifierIEICE Electronics Express, 2004
- Influence of nonlinear absorption on Raman amplification in Silicon waveguidesOptics Express, 2004
- Net optical gain in a low loss silicon-on-insulator waveguide by stimulated Raman scatteringOptics Express, 2004
- Time-resolved study of Raman gain in highly confined silicon-on-insulator waveguidesOptics Express, 2004
- Demonstration of a silicon Raman laserOptics Express, 2004
- Anti-Stokes Raman conversion in silicon waveguidesOptics Express, 2003
- Observation of stimulated Raman amplification in silicon waveguidesOptics Express, 2003