Role of free carriers from two-photon absorption in Raman amplification in silicon-on-insulator waveguides
- 12 April 2004
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 84 (15) , 2745-2747
- https://doi.org/10.1063/1.1702133
Abstract
We show experimentally that free carriers generated by two-photon-absorption in silicon-on-insulator (SOI) waveguides can introduce large losses which limit the usable pump power for Raman amplification at telecommunication wavelengths. The measured pump loss agreed with a theoretical model of the free-carrier absorption arising from two-photon-induced free carrier generation inside the waveguide.Keywords
This publication has 11 references indexed in Scilit:
- Third-order nonlinearities in silicon at telecom wavelengthsApplied Physics Letters, 2003
- Dislocation engineered β-FeSi2 light emitting diodesNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2003
- Stimulated Raman scattering in silicon waveguidesElectronics Letters, 2002
- Silicon waveguide two-photon absorption detector at 1.5 μm wavelength for autocorrelation measurementsApplied Physics Letters, 2002
- Optical gain at 1.54 μm in erbium-doped silicon nanocluster sensitized waveguideApplied Physics Letters, 2001
- Effective non-linear coefficients of optical waveguidesOptical and Quantum Electronics, 1996
- Fabrication and characteristics of tapered waveguide semiconductor Raman lasersIEE Proceedings - Optoelectronics, 1996
- A contactless method for determination of carrier lifetime, surface recombination velocity, and diffusion constant in semiconductorsJournal of Applied Physics, 1988
- Electrooptical effects in siliconIEEE Journal of Quantum Electronics, 1987
- Spontaneous-Raman-Scattering Efficiency and Stimulated Scattering in SiliconPhysical Review B, 1970