Optical gain at 1.54 μm in erbium-doped silicon nanocluster sensitized waveguide
- 31 December 2001
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 79 (27) , 4568-4570
- https://doi.org/10.1063/1.1419035
Abstract
Optical gain at 1.54 μm in erbium-doped silicon-rich silicon oxide (SRSO) is demonstrated. Er-doped SRSO thin film was fabricated by electron-cyclotron resonance enhanced chemical vapor deposition of silicon suboxide with concurrent sputtering of erbium followed by a 5 min anneal at Ridge-type single mode waveguides were fabricated by wet chemical etching. Optical gain of 4 dB/cm of an externally coupled signal at 1.54 μm is observed when the Er is excited via carriers generated in the Si nanoclusters by the 477 nm line of an Ar laser incident on the top of the waveguide at a pump power of
Keywords
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