Molecular beam epitaxy growth and characterization of thin (<2 mu m) GaSb layers on GaAs(100) substrates
- 1 March 1993
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 8 (3) , 347-356
- https://doi.org/10.1088/0268-1242/8/3/008
Abstract
No abstract availableKeywords
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