Heterojunction field-effect transistors based on AlGaSb/InAs
- 21 August 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (8) , 789-791
- https://doi.org/10.1063/1.101761
Abstract
We have fabricated the first InAs-channel field-effect transistor, which shows a transconductance of 180 mS/mm at 1 V drain-source bias (77 K). An improved buffer layer could significantly improve the device performance. In addition, we propose a new broken-gap heterojunction field-effect transistor based on these materials that could provide an order of magnitude higher transconductance compared to existing device configurations based on AlGaAs/GaAs.Keywords
This publication has 16 references indexed in Scilit:
- Negative differential resistance in AlGaSb/InAs single-barrier heterostructures at room temperatureApplied Physics Letters, 1989
- Resonant tunneling in AlSb/InAs/AlSb double-barrier heterostructuresApplied Physics Letters, 1988
- Microwave performance of AlInAs-GaInAs HEMTs with 0.2- and 0.1- mu m gate lengthIEEE Electron Device Letters, 1988
- Performance of a quarter-micrometer-gate ballistic electron HEMTIEEE Electron Device Letters, 1987
- Room-temperature operation of hot-electron transistorsApplied Physics Letters, 1987
- Band offsets at heterointerfaces: Theoretical basis, and review of recent experimental workSurface Science, 1986
- Densities and mobilities of coexisting electrons and holes in GaSb/InAs/GaSb quantum wellsSurface Science, 1986
- High field transport in GaAs, InP and InAsSolid-State Electronics, 1984
- Comparative potential performance of Si, GaAs, GaInAs, InAs submicrometer-gate FET'sIEEE Transactions on Electron Devices, 1980
- A two-dimensional simulation of a cooled, submicrometer indium arsenide Schottky-gate FETIEEE Transactions on Electron Devices, 1980