Microwave performance of AlInAs-GaInAs HEMTs with 0.2- and 0.1- mu m gate length
- 1 December 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 9 (12) , 647-649
- https://doi.org/10.1109/55.20424
Abstract
The millimeter-wave performance is reported for Al/sub 0.48/In/sub 0.52/As-Ga/sub 0.47/In/sub 0.53/As high-electron-mobility transistors (HEMTs) with 0.2- mu m and 0.1- mu m-long gates on material grown by molecular-beam epitaxy on semi-insulating InP substrates. Devices of 50- mu m width exhibited extrinsic transconductances of 800 and 1080 mS/mm, respectively. External f/sub T/ (maximum frequency of oscillation) of 120 and 135 GHz, respectively, were measured. A maximum f/sub T/ of 170 GHz was obtained from a 0.1*200- mu m/sup 2/ device. A minimum noise figure of 0.8 dB and associated gain of 8.7 dB were obtained from a single-stage amplifier at frequencies near 63 GHz.Keywords
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