Reduction in dislocation densities in the step-graded growth of InGaAs by molecular-beam epitaxy
- 15 November 1981
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 39 (10) , 808-809
- https://doi.org/10.1063/1.92565
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Studies by cross-sectional transmission electron microscope of InAs grown by molecular beam epitaxy on GaAs substratesApplied Physics Letters, 1980
- Effect of lattice mismatch on the electron mobilities of InAs grown on GaAs by MBEJournal of Vacuum Science and Technology, 1980
- Substrate effect on the lattice constants of the MBE-grown In1−xGaxAs and GaSb1−yAsyJournal of Vacuum Science and Technology, 1979
- Molecular-beam epitaxy (MBE) of In1−xGaxAs and GaSb1−yAsyApplied Physics Letters, 1977