Molecular-beam epitaxy (MBE) of In1−xGaxAs and GaSb1−yAsy
- 1 December 1977
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 31 (11) , 759-761
- https://doi.org/10.1063/1.89538
Abstract
Films of In1−xGaxAs and GaSb1−yAsy over the entire composition ranges have been grown on (100) GaAs, InAs, and GaSb substrates by MBE. In situ observations by high‐energy electron diffraction have revealed a variety of surface reconstructions and correlated the growth process with the lattice mismatch. The compositions are governed by the relative rates of In and Ga in In1−xGaxAs, but primarily by that of Sb in GaSb1−yAsy because of its dominant incorporation over As. In these alloys, Sn is found to be a donor throughout In1−xGaxAs but an amphoteric impurity in GaSb1−yAsy.Keywords
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