Low-defect InSb crystal growth by InN doping
- 1 November 1979
- journal article
- other
- Published by Elsevier in Journal of Crystal Growth
- Vol. 47 (5-6) , 746-748
- https://doi.org/10.1016/0022-0248(79)90023-x
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Hardening of GaAs by solute-vacancy pairsJournal of Applied Physics, 1976
- Impurity effect on the growth of dislocation-free InP single crystalsJournal of Applied Physics, 1976
- Dislocation pinning in GaAs by the deliberate introduction of impuritiesIEEE Journal of Quantum Electronics, 1975
- Indium antimonide—A review of its preparation, properties and device applicationsSolid-State Electronics, 1962