Silicon dioxide films fabricated by ECR microwave plasmas
- 6 January 2003
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 193-vol.1
- https://doi.org/10.1109/icpadm.1988.38367
Abstract
No abstract availableKeywords
This publication has 22 references indexed in Scilit:
- Low-temperature deposition of high-quality silicon dioxide by plasma-enhanced chemical vapor depositionJournal of Applied Physics, 1986
- A Measurement of the Effect of Intrinsic Film Stress on the Overall Rate of Thermal Oxidation of SiliconJournal of the Electrochemical Society, 1985
- Remote plasma enhanced CVD deposition of silicon nitride and oxide for gate insulators in (In, Ga)As FET devicesJournal of Vacuum Science & Technology A, 1985
- Oxidation of silicon: strain and linear kineticsThin Solid Films, 1984
- A revised analysis of dry oxidation of siliconJournal of Applied Physics, 1983
- A Viscous Flow Model to Explain the Appearance of High Density Thermal SiO2 at Low Oxidation TemperaturesJournal of the Electrochemical Society, 1982
- Indirect plasma deposition of silicon dioxideJournal of Vacuum Science and Technology, 1982
- Electrical properties of SiO2 and Si3N4 dielectric layers on InPJournal of Vacuum Science and Technology, 1981
- Characterization of Plasma‐Deposited Silicon DioxideJournal of the Electrochemical Society, 1981
- On the Kinetics of the Thermal Oxidation of Silicon: I . A Theoretical PerspectiveJournal of the Electrochemical Society, 1980