Crystallization and resistivity of amorphous titanium silicide films deposited by coevaporation
- 1 September 1982
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (9) , 6214-6219
- https://doi.org/10.1063/1.331535
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- Tantalum silicide films deposited by dc sputteringJournal of Electronic Materials, 1981
- Resistivity and oxidation of tungsten silicide thin filmsThin Solid Films, 1980
- Refractory silicides for integrated circuitsJournal of Vacuum Science and Technology, 1980
- Thermal stability of amorphous alloysSolid State Communications, 1980
- Properties of Sputtered Tungsten Silicide for MOS Integrated Circuit ApplicationsJournal of the Electrochemical Society, 1980
- Silicide formation in thin cosputtered (titanium + silicon) films on polycrystalline silicon and SiO2.Journal of Applied Physics, 1980
- Thin film interaction between titanium and polycrystalline siliconJournal of Applied Physics, 1980
- 1 /spl mu/m MOSFET VLSI technology. VII. Metal silicide interconnection technology - A future perspectiveIEEE Journal of Solid-State Circuits, 1979
- Transmission electron microscopy of cross sections of large scale integrated circuitsIEEE Transactions on Electron Devices, 1976
- Electrical conduction in concentrated disordered transition metal alloysPhysica Status Solidi (a), 1973