A high-power GaAs MESFET with an experimentally optimized pattern

1 June 1980

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 27 (6) , 1025-1029
https://doi.org/10.1109/t-ed.1980.19981

Abstract

A high-power GaAs MESFET with a high packing density has been developed in order to increase the total gatewidth within limited practical device size. The gate-finger width was experimentally optimized to increase the packing density without deterioration of the power gain. The developed power MESFET is the crossover structure and has a total gatewidth of 15 mm with gate-finger width of 190 µm in a 2.2-mm-wide chip. The packing density was almost doubled, and the output powers of 25 W at 6 GHz, and 17 W at 8 GHz were obtained from the internally matched four-chip devices.

Keywords

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