Reliability Study of GaAs MESFET's
- 1 June 1976
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 24 (6) , 321-328
- https://doi.org/10.1109/tmtt.1976.1128850
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Some aspects of GaAs FET reliabilityPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1975
- Reliability studies of one-micron Schottky gate GaAs FETPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1975
- Bistable switching on gallium arsenide Schottky gate field-effect transistorsApplied Physics Letters, 1974