Bistable switching on gallium arsenide Schottky gate field-effect transistors
- 1 November 1974
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 25 (9) , 510-511
- https://doi.org/10.1063/1.1655569
Abstract
A bistable switching phenomenon including a memory effect has been observed on a GaAs FET with Schottky gate. The characteristics of the two states of the transistor appear to be very different, the first having a high input impedance of the gate and the second Ohmic behavior of the gate. Transitions between these two states are achieved through negative or positive pulses applied to the gate. The transition time is less than 1 μsec. Each state remains stable over a period of weeks.Keywords
This publication has 3 references indexed in Scilit:
- Bistable Switching in Metal-Semiconductor JunctionsApplied Physics Letters, 1972
- Switching and Memory Characteristics of ZnSe - Ge HeterojunctionsJournal of Applied Physics, 1971
- SWITCHING AND MEMORY IN ZnSe–Ge HETEROJUNCTIONSApplied Physics Letters, 1970