High-voltage GaAs power-HBTs for base-station amplifiers

13 November 2002

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

Vol. 2 (0149645X) , 633-636
https://doi.org/10.1109/mwsym.2001.966974

Abstract

Base stations require high-power devices operating at bias voltages around 26 V. This paper reports on GaAs HBTs with increased breakdown voltage. Transistors on unthinned wafers deliver 3.2 W at 2 GHz for 27 V bias. 100 Ohms output impedance and 74% PAE make them very attractive for base-station amplifiers.

Keywords

GALLIUM ARSENIDE
HIGH POWER AMPLIFIERS
VOLTAGE
DOPING
BASE STATIONS
MESFETS
HETEROJUNCTION BIPOLAR TRANSISTORS
ELECTRONIC BALLASTS
IMPEDANCE
FREQUENCY

This publication has 1 reference indexed in Scilit:

28 V low thermal impedance HBT with 20 W CW output power
Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002