28 V low thermal impedance HBT with 20 W CW output power
- 22 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 1, 137-140 vol.1
- https://doi.org/10.1109/mwsym.1997.604541
Abstract
AlGaAs/GaAs heterojunction bipolar transistors have been fabricated which exhibit record output power for GaAs flip-chip technology, and record operating voltage for GaAs microwave power devices. Transistors with 2 mm emitter length readily achieve 20 W CW output power at 2 GHz when biased at 28 V, with typical power-added efficiencies of 62% (typical collector efficiencies of 70%). Maximum CW output power of 25 W has been obtained, corresponding to a power density of 12.5 W/mm.Keywords
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