Model for degradation of GaAs/AlGaAs HBTs under temperature and current stress
- 19 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 01631918,p. 811-814
- https://doi.org/10.1109/iedm.1995.499341
Abstract
The similarities between GaAs/AlGaAs heterojunction bipolar transistors (HBTs) and GaAs-based light-emitting diodes (LEDs) and laser diodes (LDs) under current and temperature stress are demonstrated. Electroluminescence on HBTs with degraded current gain shows a marked decrease in light emission. One device which suffered rapid degradation in current gain also showed a dark line defect (DLD). Finally, an equation used to model light output as a function of time under bias stress in LEDs and LDs was modified to model collector current vs. time for HBTs under bias stress. An excellent fit to the data is shown.Keywords
This publication has 6 references indexed in Scilit:
- Reliability analysis of microwave GaAs/AlGaAs HBTs with beryllium and carbon doped basePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Improved reliability of AlGaAs/GaAs heterojunction bipolar transistors with a strain-relaxed basePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- High-reliability InGaP/GaAs HBTs fabricated by self-aligned processPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Degradation of III–V Opto‐Electronic DevicesJournal of the Electrochemical Society, 1988
- Recombination enhanced defect reactionsSolid-State Electronics, 1978
- Injection-Enhanced Dislocation Glide under Uniaxial Stress in GaAs–(GaAl)As Double Heterostructure LaserJapanese Journal of Applied Physics, 1977