High-reliability InGaP/GaAs HBTs fabricated by self-aligned process
- 17 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 01631918,p. 191-194
- https://doi.org/10.1109/iedm.1994.383433
Abstract
We report the achievement of high-reliability self-aligned InGaP/GaAs heterojunction bipolar transistors (HBT's) with an activation energy of 2.0 eV and a time to failure of 10/sup 6/ hours at a junction temperature of 200/spl deg/C. The reliability level is comparable to other devices in practical use. We also show a possible degradation mechanism of AlGaAs/GaAs HBTs.<>Keywords
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