Reliability analysis of microwave GaAs/AlGaAs HBTs with beryllium and carbon doped base
- 2 January 2003
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- A high-performance 0.25- mu m CMOS technology. I. Design and characterizationIEEE Transactions on Electron Devices, 1992
- Stability of carbon and beryllium-doped base GaAs/AlGaAs heterojunction bipolar transistorsApplied Physics Letters, 1991
- High-reliability GaAs-AlGaAs HBTs by MBE with Be base doping and InGaAs emitter contactsIEEE Electron Device Letters, 1991
- GaAs heterojunction bipolar transistor device and IC technology for high-performance analog and microwave applicationsIEEE Transactions on Microwave Theory and Techniques, 1989
- Anomalous redistribution of beryllium in GaAs grown by molecular beam epitaxyJournal of Applied Physics, 1985
- Impedance scaling of Applied-B ion diodesJournal of Applied Physics, 1985
- Rapid zinc diffusion in gallium arsenideSolid-State Electronics, 1962