GaAs heterojunction bipolar transistor device and IC technology for high-performance analog and microwave applications
- 1 January 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 37 (9) , 1286-1303
- https://doi.org/10.1109/22.32211
Abstract
No abstract availableThis publication has 32 references indexed in Scilit:
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- High-linearity, low DC power GaAs HBT broadband amplifiers to 11 GHzPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Silicon bipolar fixed and variable gain amplifier MMICs for microwave and lightwave applications up to 6 GHzPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- A GaAs HBT ultra-linear video amplifier gain cellPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- A GaAs HBT monolithic microwave switched-gain amplifier with +31 dB to -31 dB gain in 2 dB incrementsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- An L-band temperature compensated ultra low power successive detection logarithmic amplifierPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
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