Recombination enhanced defect reactions
- 1 November 1978
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 21 (11-12) , 1391-1401
- https://doi.org/10.1016/0038-1101(78)90215-0
Abstract
No abstract availableThis publication has 59 references indexed in Scilit:
- Capacitance Transient SpectroscopyAnnual Review of Materials Science, 1977
- Observation of athermal defect annealing in GaPApplied Physics Letters, 1976
- On the role of defect charge state in the stability of point defects in siliconSolid State Communications, 1975
- Observation of Recombination-Enhanced Defect Reactions in SemiconductorsPhysical Review Letters, 1974
- Deep-level transient spectroscopy: A new method to characterize traps in semiconductorsJournal of Applied Physics, 1974
- Radiation Effects in Electroluminescent DiodesIEEE Transactions on Nuclear Science, 1971
- Effects ofGamma Irradiation on Epitaxial GaAs Laser DiodesPhysical Review B, 1970
- Injection-Stimulated Vacancy Reordering in p-Type Silicon at 76°KJournal of Applied Physics, 1965
- EFFECTS OF γ-IRRADIATION UPON LIFETIME AND LUMINESCENCE OF GaP DIODESApplied Physics Letters, 1964
- Temperature-Dependent Defect Production in Bombardment of SemiconductorsPhysical Review B, 1959