Electrical characteristics of metal-insulator-semiconductor diodes with ZrO2/SiO2 dielectric films
- 15 June 1989
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 65 (12) , 5210-5212
- https://doi.org/10.1063/1.343155
Abstract
Thin films of ZrO2 vacuum‐deposited on Si(100) substrates were oxidized in dry O2 at 800 °C and then analyzed by infrared absorption and Auger electron spectroscopy. It was found that the SiO2 layer was formed at the ZrO2/Si interface. Mo/ZrO2/SiO2/p‐Si(100) metal‐insulator‐semiconductor diodes were electrically characterized. The static dielectric constant of the ZrO2 layer decreases from 21.1 ε0 to about 15.5 ε0 due to the crystallization of amorphous ZrO2 during the oxidation. The SiO2 layer formed at the ZrO2/Si interface was found to lower the leakage current through the dielectric film.This publication has 7 references indexed in Scilit:
- Evaluation of crystalline quality of zirconium dioxide films on silicon by means of ion-beam channelingJournal of Applied Physics, 1988
- Growth of crystalline zirconium dioxide films on siliconJournal of Applied Physics, 1985
- Quadruply self-aligned stacked high-capacitance RAM using Ta2O5high-density VLSI dynamic memoryIEEE Transactions on Electron Devices, 1982
- A 5-V only 16-kbit stacked-capacitor MOS RAMIEEE Transactions on Electron Devices, 1980
- Oxygen Diffusion in the Oxide and Alpha Phases during Reaction of Zircaloy‐4 with Steam from 1000° to 1500°CJournal of the Electrochemical Society, 1979
- General Relationship for the Thermal Oxidation of SiliconJournal of Applied Physics, 1965
- On Pre-Breakdown Phenomena in Insulators and Electronic Semi-ConductorsPhysical Review B, 1938