Photoelectromagnetic properties of HgI2

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Abstract
The photoelectromagnetic effect and photoconductivity measurements at room temperature in HgI2 single crystals are reported for the first time. The sublinear dependence of these effects on the incident light intensity suggests the occurrence of trapping effects; this is taken into account by modifying the already developed calculations and introducing an ’’effective lifetime’’ τ* and an ’’effective diffusion length’’ L*. These two parameters are related to the electron and hole lifetimes. τ* and L* are calculated by the experimental data and they are dependent on the incident light intensity with a −1/3 power dependence; at an incident photon flux of 1015 photon cm−2 sec−1 we found τ*=9×10−8 sec and L*=6×10−5 cm.