Diagonal and Off-Diagonal Disorder in Doped Semiconductors
- 1 June 1982
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 111 (2) , K69-K74
- https://doi.org/10.1002/pssb.2221110235
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Hubbard model for disordered systems: Application to the specific heat of the phosphorus-doped siliconPhysical Review B, 1981
- Generalized Matsubara-Toyozawa theory for the specific heat in heavily-phosphorus-doped siliconPhysical Review B, 1979
- Self-consistent many-body theory: Application to spin waves in itinerant ferromagnetsPhysical Review B, 1979
- Electron correlation effects on Anderson localized statesSolid State Communications, 1978
- Extrinsic heat capacity in the metallic regime of heavily doped silicon and germaniumPhysical Review B, 1978
- Specific heat study of heavily P doped SiSolid State Communications, 1977
- New self-consistent many-body perturbation theory: Application to the Hubbard modelPhysical Review B, 1975
- Electric Conduction in Phosphorus Doped Silicon at Low TemperaturesJournal of the Physics Society Japan, 1967
- Electron correlations in narrow energy bandsProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1963
- Theory of Impurity Band Conduction in SemiconductorsProgress of Theoretical Physics, 1961