New intrinsic gettering process in silicon based on interactions of silicon interstitials
- 15 July 1986
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 60 (2) , 615-621
- https://doi.org/10.1063/1.337457
Abstract
A new intrinsic gettering process was found in silicon crystals subjected to a three-step annealing sequence. The process involves native point defects (silicon interstitials) rather than residual oxygen impurity, and thus it can be realized in crystals with low or virtually zero oxygen concentration. The key characteristics of the process (i.e., denuding and gettering efficiency and the role of annealing ambient) are discussed in conjunction with a kinetic model involving diffusion of silicon interstitials. The identity of the intrinsic gettering centers was pursued by transmission electron microscopy.This publication has 14 references indexed in Scilit:
- Computation of the non-steady motion of the silicon crystal-melt interface due to temperature fluctuations in the melt close to this interfaceJournal of Crystal Growth, 1981
- Microdefects in a non-striated distribution in floating-zone silicon crystalsJournal of Crystal Growth, 1981
- Oxidation, Impurity Diffusion, and Defect Growth in Silicon—An OverviewJournal of the Electrochemical Society, 1981
- A critical pulling rate for remelt suppression in silicon crystal growthJournal of Crystal Growth, 1981
- The Growth of Oxidation Stacking Faults and the Point Defect Generation at Si ‐ SiO Interface during Thermal Oxidation of SiliconJournal of the Electrochemical Society, 1981
- Interface structure and crystal growth from the melt — A model theoryJournal of Crystal Growth, 1976
- Nucleation of CuSi precipitate colonies in oxygen-rich siliconApplied Physics Letters, 1976
- Stacking Fault Generation Suppression and Grown-In Defect Elimination in Dislocation Free Silicon Wafers by HCl OxidationJapanese Journal of Applied Physics, 1976
- The introduction of dislocations during the growth of floating-zone silicon crystals as a result of point defect condensationJournal of Crystal Growth, 1975
- Theory of diffusion-limited precipitationJournal of Physics and Chemistry of Solids, 1958