Ge/Si self-assembled quantum dots grown on Si(001) in an industrial high-pressure chemical vapor deposition reactor

We report on the structural and optical properties of Ge/Si self-assembled quantum dots epitaxially grown on Si(001). The Ge islands are grown in an industrial 200 mm single-wafer chemical vapor deposition reactor. The surface density of the Ge islands is as much as ${\text{2×10}}^{10} {\mathrm{cm}}^{\mathrm{-2}}.$ The islands exhibit a maximum photoluminescence at 1.55 μm wavelength. The photoluminescence energy is correlated to the three-dimensional quantum confinement energy and to the size and geometry of the clusters, as observed by cross-section transmission electron microscopy.