Absorption and Optical Gain Spectra and Band Gap Renormalization of Highly Excited Quantum Well Systems
- 1 May 1990
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 159 (1) , 117-124
- https://doi.org/10.1002/pssb.2221590113
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Single and Many Particle Effects in the Emission Spectra of Laterally Homogeneous 2D PlasmasPhysica Status Solidi (b), 1990
- Simplified calculations of the optical spectra of two- and three-dimensional laser-excited semiconductorsJournal of the Optical Society of America B, 1989
- Dynamical Screening, Collective Excitations, and Electron–Phonon Interaction in Heterostructures and Semiconductor Quantum Wells. General TheoryPhysica Status Solidi (b), 1986
- Temperature dependence of the fundamental energy gap in GaAsSolid State Communications, 1986
- Excitonic transitions and exciton damping processes in InGaAs/InPJournal of Applied Physics, 1986
- Many-body effects in the absorption, gain, and luminescence spectra of semiconductor quantum-well structuresPhysical Review B, 1986
- Basic mechanisms of the optical nonlinearities of semiconductors near the band edgeJournal of the Optical Society of America B, 1985
- Excitons and electron-hole plasma in quasi-two-dimensional systemsJournal of Luminescence, 1985
- Relationship between the conduction-band discontinuities and band-gap differences of InGaAsP/InP heterojunctionsApplied Physics Letters, 1984
- Electron theory of the optical properties of laser-excited semiconductorsProgress in Quantum Electronics, 1984