Heavy Ion-Induced Single Event Upsets of Microcircuits; A Summary of the Aerospace Corporation Test Data
- 1 January 1984
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 31 (6) , 1190-1195
- https://doi.org/10.1109/tns.1984.4333481
Abstract
A summary of heavy ion SEU and latch-up data collected within the last several years is presented in this report. The devices tested range from simple logic circuits to microprocessors including examples of bipolar, CMOS, and NMOS technologies.Keywords
This publication has 4 references indexed in Scilit:
- Single Event Upset (SEU) of Semiconductor Devices - A Summary of JPL Test DataIEEE Transactions on Nuclear Science, 1983
- Suggested Single Event Upset Figure of MeritIEEE Transactions on Nuclear Science, 1983
- Cosmic-Ray-Induced Errors in MOS DevicesIEEE Transactions on Nuclear Science, 1980
- Simulation of Cosmic-Ray Induced Soft Errors and Latchup in Integrated-Circuit Computer MemoriesIEEE Transactions on Nuclear Science, 1979