1-GHz GaAs ADC building blocks
- 1 April 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 24 (2) , 223-228
- https://doi.org/10.1109/4.18580
Abstract
GaAs ICs for high-speed, 6-b, 1G-sample/s (Gs/s) data acquisition are under development, using a low-cost conventional D-MESFET technology. First-generation sample-and-holds (S/Hs) and comparators are currently being sampled to customers. Diode-bridge and FET-switch S/Hs have been compared. Best performances have been achieved with diode-bridge switches: 1 ns and 6 bits. Comparators provide 6-b sensitivity at 1 GHz, but require offset adjustments. Second-generation analog-to-digital converter (ADC) building blocks have been made. Performances and applications of resulting circuits as well as advanced ADC design criteria are discussed, with special attention to yield. First results on a 4-b ADC are presented.<>Keywords
This publication has 3 references indexed in Scilit:
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