Self-organization phenomenon of strained InGaAs on InP (311) substrates grown by metalorganic vapor phase epitaxy
- 1 March 1996
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 25 (3) , 431-437
- https://doi.org/10.1007/bf02666616
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Self-organization of strained GaInAs microstructures on InP (311) substrates grown by metalorganic vapor-phase epitaxyApplied Physics Letters, 1995
- Strained InGaAs quantum disk laser with nanoscaleactive regionfabricated with self-organisation on GaAs (311)B substrateElectronics Letters, 1995
- Strong photoluminescence emission at room temperature of strained InGaAs quantum disks (200–30 nm diameter) self-organized on GaAs (311)B substratesApplied Physics Letters, 1994
- Self-organized growth of strained InGaAs quantum disksNature, 1994
- Formation of interface layers in GaxIn1−xAs/InP heterostructures: A re-evaluation using ultrathin quantum wells as a probeJournal of Applied Physics, 1994
- Self-organized growth of regular nanometer-scale InAs dots on GaAsApplied Physics Letters, 1994
- Direct formation of quantum-sized dots from uniform coherent islands of InGaAs on GaAs surfacesApplied Physics Letters, 1993
- Low-temperature photoluminescence from InGaAs/InP quantum wires and boxesApplied Physics Letters, 1987
- Structure of AlAs-GaAs interfaces grown on (100) vicinal surfaces by molecular beam epitaxyApplied Physics Letters, 1984