Low-temperature photoluminescence from InGaAs/InP quantum wires and boxes
- 16 February 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (7) , 413-415
- https://doi.org/10.1063/1.98159
Abstract
InGaAs/InP quantum well layers grown by gas source molecular beam epitaxy have been used to fabricate quantum wires and boxes with transverse dimensions as small as ∼300 Å. These artificial structures exhibit intense low‐temperature photoluminescence and show exciton shifts of 8–14 meV expected of low dimensional confinement. Low surface recombination velocity characteristic of InP and its alloys should allow luminescence studies of features as small as ∼30 Å under moderate excitation intensities.Keywords
This publication has 14 references indexed in Scilit:
- High gain InGaAs/InP heterostructure bipolar transistors grown by gas source molecular beam epitaxyApplied Physics Letters, 1986
- Zero-dimensional "excitons" in semiconductor clustersIEEE Journal of Quantum Electronics, 1986
- Spatial quantization in GaAs–AlGaAs multiple quantum dotsJournal of Vacuum Science & Technology B, 1986
- GaInAs(P)/InP quantum well structures grown by gas source molecular beam epitaxyApplied Physics Letters, 1985
- Theoretical Gain of Quantum-Well Wire LasersJapanese Journal of Applied Physics, 1985
- Toward quantum well wires: Fabrication and optical propertiesApplied Physics Letters, 1982
- One-Dimensional Localization and Interaction Effects in Narrow (0.1-μm) Silicon Inversion LayersPhysical Review Letters, 1982
- Molecular Beam Epitaxy of GaAs and InP with Gas Sources for As and PJournal of the Electrochemical Society, 1980
- Evidence for low surface recombination velocity on n-type InPApplied Physics Letters, 1977
- Quantum States of Confined Carriers in Very Thin -GaAs- HeterostructuresPhysical Review Letters, 1974