Chemical vapor deposition of hydrogenated amorphous silicon
- 1 January 1986
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 59 (1) , 249-256
- https://doi.org/10.1063/1.336872
Abstract
Hydrogenated amorphous silicon films are made by atmospheric pressure chemical vapor deposition from polysilanes between 430 and 480 °C. The films have hole diffusion lengths up to 0.4 μm, as measured by the surface photovoltage technique. Oxygen impurities are shown to reduce the diffusion length. Stainless-steel and crystalline silicon substrates give slightly different results, implying that contamination is introduced by the substrates.This publication has 15 references indexed in Scilit:
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