Relationship between collection length and diffusion length in amorphous silicon
- 15 March 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 44 (6) , 613-615
- https://doi.org/10.1063/1.94852
Abstract
We demonstrate a relationship between the diffusion length lD, as measured by the surface photovoltage (SPV) method and the collection length lco, measured on the same thin films of a-Si:H. lco is the appropriate quantity to describe current collection in p-i-n cells of a-Si:H, which is normally electric-field dominated. We have shown previously that lco can be used to predict the fill factor of p-i-n cells. Therefore, this letter justifies the use of lD measurements by SPV for optimizing the quality of i layers for p-i-n cells. An expression for ambipolar diffusion is presented and the experimental results are used to place limits on the relative magnitudes of electron and hole mobilities and lifetimes.Keywords
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