Diffusion length of holes in a-Si:H by the surface photovoltage method
- 15 June 1981
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 38 (12) , 998-999
- https://doi.org/10.1063/1.92226
Abstract
The diffusion length L for holes in undoped a‐Si:H films has been measured by using a variation of the surface photovoltage method. Values of L in the range 0.33–0.45 μ were found for samples prepared at substrate temperatures Ts = 240 °C and Ts = 330 °C. After prolonged illumination, a reduction to LL was restored after annealing at 200 °C.Keywords
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