Parts-per-million-phosphorus doping of $a - Si : H :$ Changes in carrier lifetime

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15 September 1983

journal article
research article
Published by American Physical Society (APS) in Physical Review B

Vol. 28 (6) , 3635-3638
https://doi.org/10.1103/physrevb.28.3635

Abstract

We present results that demonstrate the extreme sensitivity of the electron and hole lifetimes in

a - Si : H

to parts-per-million-phosphorus incorporation.

Keywords

This publication has 7 references indexed in Scilit:

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