Amorphous silicon solar cells with ethylene-based p+ layers

Abstract
The use of ethylene (C2H4) rather than methane (CH4) as the source of carbon in the hydrogenated amorphous silicon carbide (a‐SiC:H) p+ layer of hydrogenated amorphous silicon (a‐Si:H) based solar cells deposited in a glow discharge has been explored. Device results are presented to demonstrate the utility of ethylene‐based a‐SiC:H for use in the p+ layer. Device results and material measurements reveal that the use of ethylene under the proper conditions can yield p+ a‐SiC:H which has optical and transport properties which are at least as suitable as methane‐based material.