Raman Scattering of Reactive-ion Etched GaAs
- 1 March 1988
- journal article
- research article
- Published by Taylor & Francis in Journal of Modern Optics
- Vol. 35 (3) , 365-370
- https://doi.org/10.1080/09500348814550401
Abstract
We have used Raman scattering to investigate the extent and nature of the damage caused by dry etching of GaAs samples. Damage has been seen to be confined to the first few hundred ångströms and has a correlation length larger than 250 Å. A sample on which ‘quantum dots’ had been etched has also been studied and a new feature observed in the spectrum. This is discussed in terms of a surface phonon mode.Keywords
This publication has 5 references indexed in Scilit:
- Reactive ion etching of GaAs using a mixture of methane and hydrogenElectronics Letters, 1987
- Reactive ion etching of GaAs in CCl4/H2 and CCl4/O2Journal of Applied Physics, 1984
- Effects of As+ ion implantation on the Raman spectra of GaAs: ‘‘Spatial correlation’’ interpretationApplied Physics Letters, 1984
- Raman scattering from the surface phonon mode in GaP microcrystalsPhysical Review B, 1982
- Raman spectroscopy—A versatile tool for characterization of thin films and heterostructures of GaAs and AlxGa1−xAsApplied Physics A, 1978