Modifications of hopping transport due to electrostatically enhanced Coulomb repulsion
- 10 February 1986
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 56 (6) , 643-646
- https://doi.org/10.1103/physrevlett.56.643
Abstract
It is demonstrated that the hopping conductivity of a strongly localized system may be significantly reduced by putting it in proximity with a metal. The experimental results on amorphous indium oxide films give evidence for the loss of screening in highly disordered conductors.Keywords
This publication has 4 references indexed in Scilit:
- Effect of electron-electron interactions on hopping and on delocalizationPhilosophical Magazine Part B, 1980
- Variable range hopping in doped crystalline semiconductorsSolid State Communications, 1979
- Coulomb gap in disordered systemsJournal of Physics C: Solid State Physics, 1976
- Coulomb gap and low temperature conductivity of disordered systemsJournal of Physics C: Solid State Physics, 1975