Effect of electron-electron interactions on hopping and on delocalization
- 1 December 1980
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine Part B
- Vol. 42 (6) , 781-798
- https://doi.org/10.1080/01418638008222327
Abstract
In impurity bands the Coulomb interaction energies are of the same order as the disorder energy, and must therefore be considered. The effect of these interactions on the density of one-electron excitations (the Coulomb gap) is discussed. The Coulomb gap can be alleviated by many-electron hops. The role of such many-electron hops on hopping transport at very low temperatures is evaluated, and a tentative formula for the conductivity obtained. Relevant experimental work from the literature is discussed in the context of the many-electron effects. Finally, a brief discussion of the effects of interactions on the Anderson transition is presented.Keywords
This publication has 31 references indexed in Scilit:
- The effect of stress and strong magnetic fields on the shallow impurities in semiconductors and the piezoresistance and magnetoresistance for hopping conductionPhilosophical Magazine Part B, 1980
- Variable range hopping in doped crystalline semiconductorsSolid State Communications, 1979
- Impurity band structure in lightly doped semiconductorsJournal of Physics C: Solid State Physics, 1979
- Coulomb gap in disordered systems: computer simulationJournal of Physics C: Solid State Physics, 1979
- Elementary Excitations in the Fermi GlassPhysical Review Letters, 1978
- Coulomb gap in a disordered semiconductorPhysica Status Solidi (b), 1977
- Coulomb gap in disordered systemsJournal of Physics C: Solid State Physics, 1976
- Coulomb gap and low temperature conductivity of disordered systemsJournal of Physics C: Solid State Physics, 1975
- Compensation Dependence of Impurity Conduction in Antimony-Doped GermaniumPhysical Review B, 1965
- Absence of Diffusion in Certain Random LatticesPhysical Review B, 1958