Stimulated emission at 2.8 μm from Hg-based quantum well structures grown by photoassisted molecular beam epitaxy
- 6 November 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (19) , 2026-2028
- https://doi.org/10.1063/1.102152
Abstract
We report on the first observation of stimulated emission from Hg-based quantum well structures in which the active region is a HgCdTe superlattice. The laser structures were grown on (100) CdZnTe substrates photoassisted molecular beam epitaxy. Cleaved laser cavities were optically pumped using the 1.06 μm output from a cw Nd:YAG laser. Stimulated emission cavity modes were seen at cw laser power densities as low as 3.4 kW/cm2 and at temperatures ≥ 60 K.Keywords
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