Hole transport in SiO/sub 2/ and reoxidized nitrided SiO/sub 2/ gate insulators at low temperature (FETs)

This publication has 13 references indexed in Scilit:

• Field dependence of interface-trap buildup in polysilicon and metal gate MOS devices
  IEEE Transactions on Nuclear Science, 1990
• Total dose radiation effects for implanted buried oxides
  IEEE Transactions on Nuclear Science, 1989
• Total Dose Hardening of Buried Insulator in Implanted Silicon-on-Insulator Structures
  IEEE Transactions on Nuclear Science, 1987
• Applied Field and Total Dose Dependence of Trapped Charge Buildup in MOS Devices
  IEEE Transactions on Nuclear Science, 1987
• The Relationship between 60Co and 10-keV X-Ray Damage in MOS Devices
  IEEE Transactions on Nuclear Science, 1986
• Hole Transport and Trapping in Field Oxides
  IEEE Transactions on Nuclear Science, 1985
• Field dependence of two large hole capture cross sections in thermal oxide on silicon
  Applied Physics Letters, 1983
• Photon Energy Dependence of Radiation Effects in MOS Structures
  IEEE Transactions on Nuclear Science, 1980
• Charge Distributions in MOS Capacitors for Larg Irradiation Doses
  IEEE Transactions on Nuclear Science, 1979
• Charge Yield and Dose Effects in MOS Capacitors at 80 K
  IEEE Transactions on Nuclear Science, 1976