Hole Transport and Trapping in Field Oxides
- 1 January 1985
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 32 (6) , 3940-3945
- https://doi.org/10.1109/tns.1985.4334047
Abstract
The electric field, temperature, and oxide thickness dependencies of the transport of radiation-generated holes through thick (> 100 nm) SiO2 layers was measured using fast capacitance-voltage techniques. The transport is radically slowed with respect to that in thinner oxides under similar conditions and is well described by the continuous time random walk model. Significant hole trapping in the oxide bulk is also observed.Keywords
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