FIELD-DEPENDENT HOLE TRANSPORT IN AMORPHOUS SiO2
- 1 January 1978
- book chapter
- Published by Elsevier
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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- Time-resolved hole transport inPhysical Review B, 1977
- Application of stochastic hopping transport to hole conduction in amorphous SiO2Journal of Applied Physics, 1976
- Hole Transport and Recovery Characteristics of SiO2 Gate InsulatorsIEEE Transactions on Nuclear Science, 1976
- Charge Yield and Dose Effects in MOS Capacitors at 80 KIEEE Transactions on Nuclear Science, 1976
- Anomalous transit-time dispersion in amorphous solidsPhysical Review B, 1975
- Electron−hole pair creation energy in SiO2Applied Physics Letters, 1975
- Hole and electron transport in SiO2 filmsJournal of Applied Physics, 1974