Reduction of the 1/f noise induced phase noise in a CMOS ring oscillator by increasing the amplitude of oscillation
- 31 May 1998
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 1, 185-188
- https://doi.org/10.1109/iscas.1998.704241
Abstract
Spectrum measurement results of a CMOS ring oscillator are presented that show a 10 dB decrease in 1/f noise induced phase noise at a 2 dB increase in carrier power. Simple ring oscillator theory predicts that the 1/f noise induced phase noise is independent of carrier power. It is shown that an increase in the amplitude of oscillation is accompanied by a reduction of the intrinsic 1/f noise of the periodically switched MOS transistors in the ring. A net reduction of the 1/f noise of a periodically switched NMOS transistor of more than 12 dB is measured in the basebanKeywords
This publication has 4 references indexed in Scilit:
- Analysis of timing jitter in CMOS ring oscillatorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Jitter in ring oscillatorsIEEE Journal of Solid-State Circuits, 1997
- A study of phase noise in CMOS oscillatorsIEEE Journal of Solid-State Circuits, 1996
- 1/ f noise reduction of metal-oxide-semiconductor transistors by cycling from inversion to accumulationApplied Physics Letters, 1991