1/ f noise reduction of metal-oxide-semiconductor transistors by cycling from inversion to accumulation

15 April 1991

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 58 (15) , 1664-1666
https://doi.org/10.1063/1.105130

Abstract

A new experimental setup for the study of 1/ f noise of metal‐oxide‐semiconductor transistor under nonsteady state conditions is presented. The noise measurements demonstrate for the first time that, by interposing periods of negative bias corresponding to accumulation between the monitored periods of positive bias corresponding to inversion, the low‐frequency noise sampled in the positive bias intervals is reduced.

Keywords

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