Control of terrace width and atomic step distribution on vicinal Si(111) surfaces by thermal processing
- 1 April 1993
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 8 (4) , 495-501
- https://doi.org/10.1088/0268-1242/8/4/003
Abstract
Si(111) surfaces misoriented by 4 degrees towards (112) have been studied by scanning tunnelling microscopy. Topographs of surfaces, produced by annealing, followed by rapid quenching, reveal a temperature-dependent transition from a structure consisting of wide irregular terraces separated by small irregular clusters of double steps to a single highly ordered phase of narrow, evenly spaced terraces separated by single monatomic steps. The quenched-in phases are stable at room temperature.Keywords
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