High-power operation of buried-heterostructure strained-layer InGaAs/GaAs single quantum well lasers
- 24 December 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (26) , 2762-2763
- https://doi.org/10.1063/1.103779
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Submilliampere threshold current pseudomorphic InGaAs/AlGaAs buried-heterostructure quantum well lasers grown by molecular beam epitaxyApplied Physics Letters, 1989
- Continuous operation of high-power (200 mW) strained-layer Ga 1−x In x As/GaAs quantum-well lasers with emission wavelengths 0.87 ≤ λ ≤ 0.95 μmElectronics Letters, 1988